156 X 156 Monocrystalline silicon wafer

Its main use is used for semiconductor materials and utilization of solar photovoltaic energy, heat supply, etc.
TECHNICAL PARAMETER



156×156 Mono-crystalline wafer
Item
Specification
Growth Method
CZ
Conductivity Type
P
Dopant
Boron
Orientation
100±1.0°
Dimension
156±0.5mm
Diameter
200±0.5mm
Thickness
200±20μm
Geometry
Square
Resistivity
1-3Ω.cm
Life Time
≥10μs
Oxygen Concentration
≤1×1018atoms/cm3
Carbon Concentration
≤5×1016atoms/cm3
Warpage&Bow
≤75μm
TTV
≤40μm
Dislocation Density
≤1000pcs/cm3
Saw Marks
Depth≤10μm
Edge Defect
Width≤0.4mm, Length≤0.8mm,
quantity≤2units,distance≥30mm
Surface
No cracks and pin holes visible with the naked eye