156 Polycrystal Solar Wafer

1. COMPETITIVE PRICE
2. ELIGIBLE
3. ABUNDANT
4. CONTINUABLE...
1. COMPETITIVE PRICE
2. ELIGIBLE
3. ABUNDANT
4. CONTINUABLE
General Characteristics

Product
Multicrystalline silicon wafer
Growth Method
Directional solidification
Conductivity Type
P type
Dopant
Boron
Resistivity
1~3Ω.cm
Oxygen Content
1×10
18
atom/cm
3
Carbon Content
4×10
17
atom/cm
3

Structural Characteristics

Side
156.0mm ± 0.5mm
Corner diagonal
1.5mm ± 0.5mm
Corner Angle
45°±10°
Thickness
180±20μm; 200±20μm
Surface
No stain or splash on surface

Mechanical Characteristics

TTV
≤40μm
Bow
≤70μm
Surface
No defect
Saw Mark
≤15μm