SiGe Epitaxial Wafer

Metallic Surface Concentration
Oxygen / Carbon
Concentration
2 × 10
18
/cm
2
Metallic Surface Concentration
2 × 10
13
/cm
2
Dislocation
10
3
/cm
2
Uniformity
Thickness
± 2%
Ge Element
30%
B Concentration
(Thin Film Resistivity)
± 3%
Particle ( 0.3μm)
100 pcs