Silicon Epitaxial Wafer

Silicon EPI Wafer
Diameter (mm) 76.2 ~ 200
Siliocn EPI Wafer
Diameter (mm)
76.2 ~ 200
Type / Dopant
N
:
Phosphorus
P
:
Boron
Gas
PH
3
B
2
H
6
AsH
3
Resistivity (Ω.cm)
N: 2 × 10
-3
~ 1,250
P: 1 × 10
-2
~ 100
Epi-Layer Thickness (μm)
0.1 ~ 125
* Multi layers are available
* Other customized specifications are welcome

Here are few of our reference customers:
ABB, Powerex, OSI, Dynex, Infenion, Semtech, UDT, Fargo, Semikron, Microsemi, Vishay, TFT, Semicoa, Amonix, Avago, MaCom, Quicksil, APT, Solid State Device Inc, Silicon Power, DRS, Proton, Lite-on, Taiwan Semi, Pan Jit, Rectron,Tyntek, Optotech, Epitek, NTT...etc. and also has some China Military and Aerospace customers.