Silicon Wafer

Silicon Wafer
Growth Method CZ/MCZ,FZ/ GDFZ / NTD
Diameter (mm)
50.8
76.2
100
125
150
200
Growth Method
MCZ / GDFZ / NTD
Type Dopant
N
:
Arsenic / Antimony / Phosphorus/Red Phos
P
:
Boron
Resistivity (Ω.cm)
MCZ: 1 × 10
-3
~ 100
GDFZ: 1 × 10
-3
~ 20,000
NTD: 30-600
Thickness (μm)
381
381
525
525
675
725
Thickness Tolerance (μm)
Typical ± 25
TTV (μm)
10
Bow (μm)
30
30
40
40
40
60
* Other surface conditions & customized specifications are welcome
* Backside Seal LTO & Poly both are available
* Other unmentioned parameters are per Semi Standard

Here are few of our reference customer:

Microsemi, Vishay,ABB, Powerex, OSI, Dynex, Infenion, Semtech, UDT, Fargo, Semikron, TFT, Semicoa, Amonix, Avago, MaCom, Quicksil, APT, Solid State Device Inc, Silicon Power, DRS, Proton, Lite-on, Taiwan Semi, Pan Jit, Rectron,Tyntek, Optotech, Epitek, NTT...etc. and also has some China Military and Aerospace customers.