poly-crystalline sillicon solar wafer

Poly-crystalline sillicon wafer
1 Multi-crystalline silicon wafer
2 use of the international top wire saw cutting equipment
Poly-crystalline sillicon wafer
Item
Characteristics
Conductivity Type
P-Type
Shape
Square
Resistivity
0.5-3Ω·cm
Dimension
156mm×156mm±0.5mm
Diagonal
219.2mm±0.5mm
Thickness
180μm±20μm, 200180μm±20μm
Oxygen Concentration
≤1×10
18
atoms/cm
3
Carbon Concentration
≤4.5×10
17
atoms/cm
3
Dopant
Boron
Total Thickness Variation
≤25μm
Bow
≤50μm
Chips
Size≤1mm×1mm allowed
Saw Mark
≤20μm
Appearance Quality
V-type edge indents, cracks, breakage and holes are not permitted. Surface should be clean and without spots.