polycrystalline silicon wafer

polycrystalline silicon solar wafer 156*156mm
1. solar grade
polycrystalline silicon solar wafer 156*156mm

Material properties


Property
Specification
Reference Standard
Growth Method
DDS

Conductivity Type/Dopant
P/Boron
ASTMF42
Oxygen Concentration
≤1.0*1018 atoms/cm3
ASTMF1188
Carbon Concentration
≤5.0*1017 atoms/cm3
ASTMF1391
Electrical Properties


Property
Specification
Reference Standard
Resistivity
1-3Ω.cm
ASTMF43,ASTMF84
Lifetime
≥2 us
ASTMF28


Property
Specification
Reference Standard
Width
156±0.5mm

Rectangular
90±0.3°

Diagonal
219.2±0.5mm

Thickness
200±20 um
ASTMF533
TTV
≤30 um
ASTMF533,F657
Saw Marks
≤20 um
ASTMF1188
Edge Chip
Edge≤0.5mm,depth≤0.3mm,max:2 places/pc,v-shape chip,crack unacceptable

Warpage
≤50 um
ASTMF657
Orientation
100±3°
ASTMF26