125X125 Monocrystalline silicon wafer

Its main use is used for
semiconductor materials
and utilization of solar photovoltaic energy,
heat supply, etc.

Length of wafer edge
125±0.5mm 125±0.5mm 156±0.5mm
Diagonal
150±0.5mm 165±0.5mm 200±0.5mm
Conductivity type
P-type
Dopant
Boron
Thickness
200+20μm
Resistivity
1-3Ωcm 3-6Ωcm
Oxygen concentration
1X1018atoms/cm
3
Carbon concentration
5X1016atoms/cm
3
Lifetime
10μs
Chamfer discrepancy
0.5mm
Vertical angle deviate
90+0.3
.
Orientation
100
Dislocation Density
3000/cm
2
TTV
uniwafer thickness 15% 30μm
Warp
50μm
Saw marks
15μm
Cracks and pin holes
No visual cracks and V-type pin holes
Edge
No edge defect and silicon drop
Surface
1.As clean,cut,No stains and detergent vestigital.
2.No visual knife marks,concave pit.