156 x 156 Poly-crystalline silicon wafer

156 x 156 Poly-crystalline silicon wafer
156 x 156
Poly-crystalline silicon wafer
Size (mm), 156 x 156
Growth method, DSS
Conductivity type, P/N
Orientation, <100>
Dopant, Boron
Resistivity (Ω.cm), 0.8-3.0Ω.cm
Bulk Lifetime (μs), ≥ 2μs
Oxygen content (atmos/cm
3
) , ≤ 6.0 x 10
17
Carbon content (atmos/cm
3
) , ≤ 7.0 x 10
17
Width of wafer (mm) , 156 x 156 ± 0.5
Square sides angle, 45 º ± 10º
Straight sections length deviation, 0.5-2mm
Thickness(μm), 200 ±20
TTV (μm), ≤ 30
Saw mark, ≤ 15μm
Warp (μm), ≤ 75
Chips, Depth<0.3mm; Length<0.5mm
Surface quality, no stain, no edge breakage no pinhole and cracks by visual inspection.