mono crystalline wafer

solar wafer, muti & mono silicon wafer, 6inch & 8 inch size,
mono125*125mm , muti 156*156mm
Material
silicon
mono silicon wafer
Growing Method
cz
Directional Solidification
Conductivity Type
p
p-type ( Boron Doped )
Carbon Content
at/cm
3

< 5,0x10
1
7
Oxygen Content *
at/cm
3

< 1,0x10
1
8
Dimensions
mm
125 x 125
Tolerance / accuracy
mm
+/- 0,5 or +/-0.25 (optionally)
Symmetry

Symmetry as per the drawing in the Enclosure No. 1
Thickness
µm
200 +/- 20
Total Thickness Variation (Taper)
µm
< 25
Bow
µm
< 50
Surface Saw Damage Depth
µm
<
10
typically
Edge Cracks
No cracks in wafer allowed.
Chipping
depth ≤0,1mm and
length ≤0,5mm, locally removing ≤20% of wafer thickness