125*125mm Solar Grade Monocrystalline Silicon Wafer

Commodity 6 inch Mono-crystalline Wafer
Growth Method CZ
Conductive Type P
Dopant B
Orientation 100
125*125mm Solar Grade Monocrystalline Silicon Wafer

Commodity 6 inch Mono-crystalline Wafer
Growth Method CZ
Conductive Type P
Dopant B
Orientation 100
Off Orientation ± 1°
Resistivity(ρ) 1.0- 3.0 Ω· Cm
Minority Carrier Lifetime ≥10μs
Oxygen Content (Oi) ≤1χ 1018atoms/cm3
Carbon Content(C) ≤5χ 1016atoms/cm3
Dimension 125*125± 0.5mm
Diagonal 165± 0.4mm
Square Sides Angle 90± 0.3°
Thickness 200± 20 μm
TTV ≤20μm
Warp ≤30μm
Chips Depth≤0.3mm; Length≤0.5mm
Appearance No Stain, No Pinhole and Cracks by Visual Inspection

specification
125mm X 125mm
156mm X 156mm
type
P type
wafer width
125±0.5mm
156±0.5mm
wafer diameter
150±0.5mm
203±0.5mm
wafer thickness
200±20um
variation in total thickness
≤30um
life time
≥10us
resistivity
0.5~3Ω · cm
3~6Ω · cm
cutting mode
multiline cutting
crystallographic orientation
(100) ± 1°
dislocation density
≤3000/cm2
Payment terms: T/T 30 % as deposit in advance, the balance payment against by T/T or L/C.