Monocrystalline Wafer

Clean, no stain, no water mark, no contamination,no finger print, no pinhole and cracks by visual inspection
Technical parameters
Physical Characteristics
Appearance
Square(4 Square corner)
Dimension
125×125±0.5 mm
Diameter
165±0.5 mm
Thickness
200±20µm
TTV
<30µm
Surface quality
As cut and cleaned. No grease stains and pin holes
Warpage
<50µm
CornerAngle
90±0.5°
Edge chips(mm)
length≤1 depth≤0.5 No more than 3
Saw mark depth
Depth≤15µm
Dislocation Density
≤3000 cm
3
Structural Characteristica
Parameter
Specification
Crystal growth method
CZ
Conductivity Type
P
Carbon content
≤1×10
17
atoms/cm
3
Oxygen content
≤1×10
18
atoms/cm
3
Resistivity
1-3Ω•cm
Minority carrier lifetime
≥10µs