Solar Poly-Crystalline Si wafer

1Poly-Crystalline Si wafer
2 156*156mm
3 Growth method:DSS
4 Conductivity:P


1) Geometrical product specification

Shape
square

Size
156.0×156.0(±0.5)mm

Straight angle
90±0.3°







Chamfering angle and size

Bevel edge


0.7--2.1 mm




Right-angle edge


0.5—1.5 mm

Chamfering angle

45±10°


Thickness

TWP-156-200
200.0±20 μm

Center thickness
TWP-156-180 180.0±15 μm
Center thickness

Total thickness variation (TTV)

≤30 μm
Measured on 5-point method or 3-line method



2) Wafer surface condition


Edge damage

length≤1 mm,depth≤0.5 mm,number≤2


Edge crack

No

Saw marks
depth≤15 μm

Crack , Pin Holes
No obvious defects

No. of crystals per cm2
≤20


Stains
number≤3 (under light intensity of300-500 lux),
total area ≤3 cm2

Warp
≤50 μm


3) Electrical Parameters

Resistivity
1.0~3.0 Ω·cm
Resistivity inhomogeneity
≤25%
Effective Minority carrier Life
≥1.2 μs

4) Chemical Parameters

Growth Method
DSS
Conductivity type / Dopant Material
p-type/Boron
Oxygen Concentration
≤8×1017 atoms/ cm2
Carbon Concentration
≤1×1018 atoms/ cm2



Metallic Contamination
≤0.05 ppmw